▎ 摘　　要

NOVELTY - Graphene switching device (100) comprises: a first electrode (121) and an insulating layer (140) in first and second regions, respectively of a semiconductor substrate (110); many metal particles; a graphene layer on the metal particles; a second electrode (122) on the graphene layer in the second region, configured to face the insulating layer; a gate insulating layer configured to cover the graphene layer; and a gate electrode on the gate insulating layer. The semiconductor substrate forms an energy barrier between the graphene layer and the first electrode. USE - Used as graphene switching device. ADVANTAGE - The graphene switching device: has a channel width that is not restricted like in a graphene nanoribbon, and thus, graphene defect in a graphene patterning process may be prevented or reduced; and requires reduced operating current by forming metal particles between the semiconductor barrier and the graphene layer, thus reducing a driving power of the graphene switching device. DETAILED DESCRIPTION - Graphene switching device (100) comprises: a first electrode (121) in a first region of a semiconductor substrate (110) and an insulating layer (140) in a second region of the semiconductor substrate; many metal particles on a surface of the semiconductor substrate between the first and second regions; a graphene layer on the metal particles and extending on the insulating layer; a second electrode (122) on the graphene layer in the second region, configured to face the insulating layer; a gate insulating layer configured to cover the graphene layer; and a gate electrode on the gate insulating layer. The semiconductor substrate forms an energy barrier between the graphene layer and the first electrode. DESCRIPTION OF DRAWING(S) - The figure shows a schematic cross-sectional view of a graphene switching device having a tunable barrier. Graphene switching device (100) Semiconductor substrate (110) First electrode (121) Second electrode (122) Insulating layer (140)