• 专利标题:   Seamless hexagonal boron nitride atomic monolayer thin film used for fabricating graphene device, has pseudo-single crystal structure having seamlessly merged boron nitride grains having preset dimension.
  • 专利号:   US2016237558-A1, KR2016099385-A, US9963346-B2
  • 发明人:   SUH H, SONG Y, WU Q, LEE S, KIM M, PARK S, KIM M W, LEE S J, PARK S W, SONG Y J, SUH H S
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, UNIV SUNGKYUNKWAN RES BUSINESS FOUND, UNIV SUNGKYUNKWAN RES BUSINESS FOUND, SAMSUNG ELECTRONICS CO LTD, UNIV SUNGKYUNKWAN RES BUSINESS FOUND
  • 国际专利分类:   C01B021/064, C23C016/02, C23C016/30, C23C016/34, C23C016/455
  • 专利详细信息:   US2016237558-A1 18 Aug 2016 C23C-016/30 201657 Pages: 11 English
  • 申请详细信息:   US2016237558-A1 US017753 08 Feb 2016
  • 优先权号:   KR021777

▎ 摘  要

NOVELTY - A seamless hexagonal boron nitride atomic monolayer thin film has a pseudo-single crystal structure having boron nitride grains seamlessly merged. Each of the grains has a dimension of 10-1000 mu m. USE - Seamless hexagonal boron nitride atomic monolayer thin film is used for fabricating graphene device. ADVANTAGE - The seamless hexagonal boron nitride atomic monolayer thin film has reduced defects, and is manufactured with improved productivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for fabrication of seamless hexagonal boron nitride atomic monolayer thin film, which involves pre-annealing a metal thin film at a temperature (t1) in a chamber while supplying hydrogen gas to the chamber, supplying nitrogen source gas and boron source gas to the chamber, and forming the seamless hexagonal boron nitride atomic monolayer thin film by annealing the pre-annealed metal thin film at a temperature (t2).