▎ 摘　　要

NOVELTY - The isolating element has an isolating element unit arranged with a silicon substrate, a metal grating, a dielectric film and a graphene layer from bottom to top portion. The graphene layer and the silicon substrate are connected with positive and negative poles of a power supply. The graphene layer is formed with a transverse H-shaped hole. An included angle is formed in the metal grating and the H-shaped hole at 45 degrees. The silicon substrate is formed with an N-doped or P-doped silicon chip. Doping concentration level is maintained at 1017-1018cm-3. The metal grating is made of gold, silver, copper, iron or aluminum material. Period of the metal grating is 440 nm. Width of the metal grating is 200 nm. The dielectric film is formed with a film transparent infrared light. The dielectric film is formed as a zinc selenide (ZnSe) dielectric film or calcium fluoride (CaF2) dielectric film. Thickness of the dielectric film is 1.85 mu microns. USE - Frequency-adjustable broadband infrared isolating element for diode in circuit for processing optical information. ADVANTAGE - The isolating element is simple to operate, and has low cost and less volume, and can adjust working frequency section, and avoids interference and damage due to echo in a light path of the light source or optical components. The polarization rotation performance of the light and isolation performance are improved. The manufacturing cost is reduced. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the frequency-adjustable broadband infrared isolating element.