▎ 摘　　要

NOVELTY - The structure has a substrate formed with an aluminum nitride nucleation layer, a gallium nitride buffer layer and a epitaxial structure layer. An aluminum nitride insulation layer, a metal catalyst layer and a graphene buried radiating layer are formed between the substrate and the aluminum nitride nucleation layer from bottom to top. The graphene buried radiating layer is connected with a source electrode. A rear board is connected with a heat sink. USE - Gallium nitride device in-situ growing graphene buried electrode structure. ADVANTAGE - The structure reduces rear surface deep etching complexity, realizes front direct source-grounding function and improves thermal conductivity of graphene to quickly transfer heat generated by an active region so as to improve reliability of high-power gallium nitride device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a gallium nitride device in-situ growing graphene buried electrode structure manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a gallium nitride device in-situ growing graphene buried electrode structure.