• 专利标题:   Manufacture of graphene-grown substrate used in manufacture of electronic component, involves forming substrate having substrate layer, depositing by supplying carbon-containing gas, adsorbing hydrocarbon radicals, and growing.
  • 专利号:   KR2016073263-A
  • 发明人:   LEE Y T
  • 专利权人:   LEE Y T
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   KR2016073263-A 24 Jun 2016 C01B-031/04 201657 Pages: 96
  • 申请详细信息:   KR2016073263-A KR181870 16 Dec 2014
  • 优先权号:   KR181870

▎ 摘  要

NOVELTY - Manufacture of graphene-grown substrate involves forming a substrate having a substrate layer, carrying out low-pressure chemical vapor deposition by supplying a carbon-containing gas, adsorbing hydrocarbon radicals, diffusing, and heteroepitaxially growing on the surface of substrate layer without providing a catalyst layer on the substrate layer. USE - Manufacture of graphene-grown substrate used in manufacture of electronic component (all claimed). ADVANTAGE - The method enables manufacture of graphene-grown substrate without using catalyst. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) graphene-grown substrate; (2) electronic component, which is equipped with the graphene-grown substrate; (3) manufacturing device of graphene-grown substrate; and (4) gas injection unit.