• 专利标题:   Graphene-emitting diode structure for diode logic gate, has rectangle portions that are connected with graphene nanostructures, and graphene nanostructure that is composed of negative type and positive type doping graphene nanostructure.
  • 专利号:   CN102709332-A, CN102709332-B
  • 发明人:   FU Y, HUANG R, REN L, ZHAO H, WEI Z, ZHANG X, YE T
  • 专利权人:   UNIV PEKING
  • 国际专利分类:   H01L029/06, H01L029/861, H03K019/08
  • 专利详细信息:   CN102709332-A 03 Oct 2012 H01L-029/861 201304 Pages: 7 Chinese
  • 申请详细信息:   CN102709332-A CN10153652 17 May 2012
  • 优先权号:   CN10153652

▎ 摘  要

NOVELTY - The graphene-emitting diode structure has a triangular graphene nanostructure whose width gradient is projected along the extended side surface of diode main portion. A narrow two rectangle portions are connected with graphene nanostructures. The graphene nanostructure is composed of negative type and positive type doping graphene nanostructure. USE - Graphene-emitting diode structure used for diode logic gate (claimed). ADVANTAGE - The design pattern of the diode structure can be realized so as to form complete logic circuit. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for diode logic gate. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the graphene-emitting diode structure. Lengths of graphene nanostructure (L1-L3) Widths of graphene nanostructure (W1-W6)