▎ 摘　　要

NOVELTY - The method involves forming (1) electric conduction channel on a flexible substrate. The source and drain electrodes are formed (2) using a beam exposure patterning process and the source and drain metal electrodes are patterned. A low temperature deposition process is performed (3) to form a grid medium layer. An etching process is performed (4) on the gate medium layer. An electric conduction channel is peeled-off (5) from the gate medium layer. A contact electrode is formed (6) in the source, drain and gate electrodes. USE - Method for preparing flexible substrate of graphene device. ADVANTAGE - The flexible substrate is prepared irrespective of the high temperature process. Sub-micron level of fine image structure is prepared. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the process for preparing flexible substrate of graphene device. (Drawing includes non-English language text) Step for forming electric conduction channel on flexible substrate (1) Step for forming source and drain electrodes using beam exposure patterning process (2) Step for performing low temperature deposition process to form grid medium layer (3) Step for performing etching process on gate medium layer (4) Step for peeling-off electric conduction channel from gate medium layer (5) Step for forming contact electrode in source, drain and gate electrodes (6)