• 专利标题:   Method for preparing three-layer graphene, involves connecting metal substrate to solid carbon source and contained in chemical vapor deposition reaction system, and generating three layers of graphene on surface of metal substrate.
  • 专利号:   CN111606323-A
  • 发明人:   ZOU D, ZHAO Y, LIU S, ZHANG Z, YU D
  • 专利权人:   UNIV SOUTHERN SCI TECHNOLOGY
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN111606323-A 01 Sep 2020 C01B-032/186 202084 Pages: 10 Chinese
  • 申请详细信息:   CN111606323-A CN10552539 17 Jun 2020
  • 优先权号:   CN10552539

▎ 摘  要

NOVELTY - The method involves providing a metal substrate, a solid carbon source and a gaseous carbon source. The metal substrate is connected to the solid carbon source and contained in a chemical vapor deposition reaction system, and the gaseous carbon source is passed through the chemical vapor deposition reaction. Three layers of graphene are generated on the surface of the metal substrate. USE - Method for preparing three-layer graphene. ADVANTAGE - The single crystal lateral size of the three-layer graphene is 10-500 mu m, belongs to large-size graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a three-layer graphene (claimed). DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the three-layer graphene.