• 专利标题:   Graphene plasmon gas sensor for use in semiconductor high-end chip manufacturing process monitoring, explosive detection and medical diagnosis fields, has substrate, graphene layer and noble metal particle layer that are orderly arranged from bottom to top.
  • 专利号:   CN113533300-A, CN113533300-B
  • 发明人:   LIU R, CHEN W, LIU G, ZHAO M
  • 专利权人:   UNIV LINGNAN NORMAL
  • 国际专利分类:   G01N027/12, G01N021/65
  • 专利详细信息:   CN113533300-A 22 Oct 2021 G01N-021/65 202203 Chinese
  • 申请详细信息:   CN113533300-A CN10833247 22 Jul 2021
  • 优先权号:   CN10833247

▎ 摘  要

NOVELTY - The sensor has a substrate (1), a graphene layer (2) and a noble metal particle layer (3) that are orderly arranged from bottom to top. The noble metal particle layer comprises multiple noble metal particles). The noble metal particles are located above the graphene layer. A medium layer is arranged between the graphene layer and the noble metal particle layer. The substrate comprises a heavily doped silicon substrate (101) and a silicon dioxide layer (102). The heavily doped silicon substrate and the silicon dioxide layer are laminated from bottom to top. USE - Graphene plasmon gas sensor for use in semiconductor high-end chip manufacturing process monitoring, explosive detection and medical diagnosis fields. ADVANTAGE - The sensor can ensure that noble metal particles generates surface enhanced Raman effect, enhance interaction of graphene plasmons and gas molecules and improve Raman response of the graphene layer. The sensor can obtain Raman spectrum of plasmon enhanced and improve electrical response of graphene layer and sensitivity. The sensor can increase gas concentration on the graphene layer and promote conductivity change of a sensing layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene plasmon gas sensor manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a graphene plasmon gas sensor. Substrate (1) Graphene layer (2) Noble metal particle layer (3) Heavily doped silicon substrate (101) Silicon dioxide layer (102)