▎ 摘　　要

NOVELTY - The device has a lower electrode (2) arranged on the substrate (1). A resistance layer is arranged on the lower electrode. An upper electrode (4) is arranged on the resistance layer (3). The resistance layer includes a stack of a graphene oxide film and an iron oxide film, where a resistance value of the resistance layer varies based on a voltage applied to the upper electrode. The iron oxide film is changed through reduction/oxidation of the iron oxide to a state in which conductive/non-conductive iron oxide (Fe3O4) ions are rich, and conductive filaments are formed/ removed, respectively. USE - Non-volatile memory device e.g. NOT-AND (NAND) Flash and resistive random access memory (ReRAM) used in semiconductor device. ADVANTAGE - The resistive switching memory device possess an improved On/Off state current ratio compared to the graphene oxide based memory device. The resistance layer of the non-volatile memory device is made of a hybrid material that allows high efficiency and excellent reproducibility in the resistance change of the memory device, in order to overcome the poor electrical characteristics, such as the low current at a low resistance-state and the high operating threshold voltage, when the graphene oxide is employed as the resistance layer. The non-volatile memory device employs the stack of the iron oxide and graphene oxide thin films as the resistance layer so that when the SET voltage or the RESET voltage is applied to the upper electrode to switch the resistance state, the stable resistance values are maintained. The current flow from the drain to the source is significantly reduced due to the high resistance of the resistive memory device, when the graphene oxide-based memory device becomes a high resistance-state. The resistive memory device possess the improved current and voltage characteristics based on the enhanced resistance switching by using the stack of the oxide graphene thin film and the iron oxide thin film as the resistance layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing a non-volatile resistive switching memory device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a resistive switching memory device. Substrate (1) Lower electrode (2) Resistance layer (3) Upper electrode (4)