▎ 摘　　要

NOVELTY - A detector apparatus comprises a semiconductor structure (6) with a first surface; a graphene layer (10) disposed over at least a portion of the first surface of the semiconductor structure and having an upper surface (6a) with a first portion configured to collect photogenerated carriers and to establish a potential on the first surface of the semiconductor structure; a first contact structure (12) electrically connected to the semiconductor structure; and a second contact structure (14) electrically connected to a second portion of the upper surface of the graphene layer. USE - As a detector apparatus used in active pixel sensor apparatus and charge coupled device (claimed); and used in variety of applications to sense visible light and other electromagnetic radiation, such as for recording images in astronomy, digital photography and digital cinematography, and for the ultraviolet detection including ultraviolet A, ultraviolet B, ultraviolet C, near ultraviolet, middle ultraviolet, far ultraviolet, extreme ultraviolet, vacuum ultraviolet, X-ray, soft X-ray detection, as well as for visible detector/imager, near infrared detector/imager, neutron detector/imager, and electron bombardment imager applications, and used in monolithic active pixel imager and charge coupled imager applications. ADVANTAGE - The detector apparatus is an improved ultraviolet and extreme ultraviolet wavelength photodetector apparatus. The photon and electron transparent graphene layer is for resistance lowering or shunting, controls the surface potential of the surface of the semiconductor structure, and minimizes or eliminates a dead layer in which photogenerated carriers are trapped in a potential well near the back surface of the semiconductor structure due to effects such as the band bending. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) making a detector, involving forming a graphene layer over a first surface of a semiconductor structure to a thickness of less than or equal to 3 nm, where the graphene layer comprises first and second portions, forming a first contact structure electrically connected to the semiconductor structure, and forming a second contact structure on the second portion of the upper surface of the graphene layer; (2) an active pixel sensor apparatus comprising a semiconductor structure with a first surface, at least one pixel detector, comprising a graphene layer disposed over at least a portion of the first surface of the semiconductor structure, where the graphene layer includes a sensing surface configured to collect photogenerated carriers and adapted to establish a potential at the first surface of the semiconductor structure, a transfer transistor including a source formed in the semiconductor structure, a control gate, and a drain electrically coupled with a readout circuit operative to read data from the at least one pixel detector using the control gate, and a reset transistor formed in the semiconductor structure and operative to selectively remove charge from the pixel detector; and (3) a charge coupled device (CCD) comprising a semiconductor structure with a first surface, at least one pixel detector having graphene layer disposed over at least a portion of the first surface of the semiconductor structure, where the graphene layer includes a sensing surface facing a backside of the CCD, a transfer transistor including a source formed in the semiconductor structure, and a drain electrically coupled with a readout circuit operative to read data from the pixel detector. DESCRIPTION OF DRAWING(S) - The figure shows a partial sectional side elevation view illustrating two cells and an intervening isolation structure in a detector apparatus. Semiconductor structure (6) Upper surface (6a) Graphene layer (10) First contact structure (12) Second contact structure (14)