• 专利标题:   Chemical vapor deposition (CVD) method for growing large area graphene at low cost, involves using untreated rolled metal as substrate of CVD graphene growth and using surface of residual grease as carbon source of graphene growth.
  • 专利号:   CN105887041-A, CN105887041-B
  • 发明人:   CHENG H, MA L, REN W
  • 专利权人:   INST METAL RES CHINESE ACAD SCI, INST METAL RES CHINESE ACAD SCI
  • 国际专利分类:   C01B031/04, C23C016/26, C01B032/186
  • 专利详细信息:   CN105887041-A 24 Aug 2016 C23C-016/26 201673 Pages: 5 Chinese
  • 申请详细信息:   CN105887041-A CN10039341 26 Jan 2015
  • 优先权号:   CN10039341

▎ 摘  要

NOVELTY - The chemical vapor deposition (CVD) method for growing large area graphene, involves using untreated rolled metal as the growth substrate of CVD graphene, using the grease remaining on the metal surface, using grown graphene as carbon source, using untreated rolled metal as the substrate of CVD graphene growth, using the surface of residual grease as carbon source of graphene growth, directly placing the materials into a CVD system to grow, forming the large area of graphene on the surface. USE - Chemical vapor deposition (CVD) method for growing large area graphene at low cost. ADVANTAGE - The method eliminates the need for external carbon source, reduces the preparation cost large area graphene.