▎ 摘　　要

NOVELTY - Method for forming film involves supplying (S102) an aromatic hydrocarbon gas (A1) having a functional group (F1), to a substrate on which a base film is formed, and activating (S104) the aromatic hydrocarbon gas (A1) adsorbed on the surface of the base film using plasma of a reaction gas (R1) containing at least a rare gas. USE - Method for forming film e.g. graphene film on substrate e.g. semiconductor wafer. ADVANTAGE - The method enables efficient formation of high-quality graphene film under a low-temperature environment, and is capable of suppressing energy of ions in the generated plasma, and reducing damage of the graphene film. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a film-forming device, which consists of a processing container for accommodating the substrate on which the base film is formed, and a control unit for executing gas (A) supply process and activation process. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of the film forming method. (Drawing includes non-English language text) Substrate providing process (S101) Aromatic hydrocarbon gas supply process (S102) Purging process (S103,S104) Aromatic hydrocarbon gas activation process (S104) Graphene film thickness determination process (S106)