• 专利标题:   Depositing high dielectric thin film graphene on sample specimen involves providing high dielectric medium to grow graphene on desired sample.
  • 专利号:   CN103915328-A, CN103915328-B
  • 发明人:   SHEN Y, WEI H, YANG S, ZHOU P
  • 专利权人:   UNIV FUDAN
  • 国际专利分类:   C23C016/455, H01L021/285
  • 专利详细信息:   CN103915328-A 09 Jul 2014 H01L-021/285 201465 Pages: 6 Chinese
  • 申请详细信息:   CN103915328-A CN10078090 05 Mar 2014
  • 优先权号:   CN10078090

▎ 摘  要

NOVELTY - Depositing high dielectric thin film graphene on sample specimen involves providing a high dielectric medium to grow graphene on the sample specimen, and then inducing graphene sample medium under electric field to obtain polarized graphene. The polarized graphene is then passed into the water vapor to enable the polarized graphene to adsorb water molecules on its surface. USE - Method for depositing high dielectric thin film graphene on sample specimen (claimed) that is used in manufacturing nano-scale and graphene-based electronic devices. ADVANTAGE - The method enables to deposit high dielectric thin film graphene on sample specimen without disrupting the original graphene lattice structure in asimple and economical manner.