• 专利标题:   Manufacture of doped graphene for manufacturing semiconductor, involves mixing graphite powder and acid solution, oxidizing, drying, impregnating graphite oxide solid to organic compound aqueous solution, microwave heating and reducing.
  • 专利号:   KR2014056570-A
  • 发明人:   LEE S S, KIM H, PARK M, LIM S H, GON S J, KWANG H L, KIM T A
  • 专利权人:   KOREA INST SCI TECHNOLOGY
  • 国际专利分类:   B01J019/12, B82B003/00, C01B031/02
  • 专利详细信息:   KR2014056570-A 12 May 2014 C01B-031/02 201446 Pages: 12
  • 申请详细信息:   KR2014056570-A KR120761 29 Oct 2012
  • 优先权号:   KR120761

▎ 摘  要

NOVELTY - Graphite powder is added to an acid solution, mixed and an oxidizing agent is added and oxidation reaction is carried out. The resultant graphite oxide solid is dried and powdered to obtain graphite oxide powder. The obtained powder is impregnated with an aqueous solution of organic compound, and dried to obtain graphitic oxide phase. The resultant material is heated under microwave irradiation, stripped and reduced to obtain doped graphene. USE - Manufacture of doped graphene for manufacture of semiconductor. ADVANTAGE - The method efficiently and economically provides doped graphene, by simple method without affecting the environment.