• 专利标题:   HIT solar battery, has intrinsic semiconductor layer provided with N type doped layer, which is fixed with graphene layer that is connected with electrode, where electrode is fixed with comprising back electric thin film.
  • 专利号:   CN204315607-U
  • 发明人:   FANG J, HE D, HUANG Y, QIN C, SHI Q
  • 专利权人:   GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY
  • 国际专利分类:   H01L031/0747
  • 专利详细信息:   CN204315607-U 06 May 2015 H01L-031/0747 201550 Pages: 9 Chinese
  • 申请详细信息:   CN204315607-U CN20703929 21 Nov 2014
  • 优先权号:   CN20703929

▎ 摘  要

NOVELTY - The utility model claims an assemblable HIT solar battery, comprising frontage composite electrode, P type doped layer composite, the first composite intrinsic semiconductor layer, N type silicon, the second composite intrinsic semiconductor layer, composite N type doped layer and the back composite electrode, wherein, frontage composite electrode comprising the first composite TCO transparent electric conduction thin film and electrode frontage; composite P type doped layer comprising graphene layer and P type doped layer, the first composite intrinsic semiconductor layer comprises graphite layer and the first intrinsic semiconductor layer; the second intrinsic semiconductor layer comprising graphene composite layer and the second intrinsic semiconductor layer, composite N type doped layer comprising graphene layer and N type doped layer back composite electrode comprising the second composite TCO transparent electric conduction thin film and the back electrode. The utility model is new type HIT cell of each layer structure can detached and again any combination, when a certain layer structure can make the abnormal, greatly increase have simple degree of processing speed and process the battery.