▎ 摘　　要

NOVELTY - The medium has a set of instructions for forming a back-gate dielectric layer over a conductive substrate, and forming a graphene layer over the back-gate dielectric layer. A source contact, a drain contact and a side-gate contact are formed over a portion of the graphene layer. The graphene layer is located between the source contact, the drain contact and the side-gate contact, and a graphene channel is provided with graphene side gates (627, 628). A top-gate dielectric layer is formed over the graphene layer. USE - Non-transitory tangible computer readable medium for fabricating an integrated circuit structure i.e. gate tunable graphene-based electronic nanoconstriction device (claimed). ADVANTAGE - The medium enables reducing defect and impurity scattering, utilizing the top and back-gate dielectrics to minimize hysteresis and trap-charge problems, manipulating quantum information encoded in the propagating electron-wave flying qubits by using an electron-wave beam splitter, and reducing the number of electron wave modes passing through nanoconstriction. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene-based nanoconstriction device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a tunable graphene nanoconstriction device. Tunable graphene nanoconstriction device (600) Graphene side gates (627, 628) Top gate (650) Dash line (670) Solid curved line (672)