▎ 摘　　要

NOVELTY - Growth method of aluminum nitride thin film, involves depositing a graphene thin film on the surface of a glass substrate, and directly depositing an aluminum-nitride thin film at high temperature on the substrate. USE - Growth method of aluminum nitride thin film for LED device. ADVANTAGE - The method enables economical growth of aluminum nitride thin film of large area, at low temperature. The film has excellent thermal conductivity and prevents overheating of LED chips.