• 专利标题:   Preparing germanium-doped graphene material for for quantum light source, involves placing germanium source and carbon source in reaction furnace tube, introducing into protective atmosphere and reacting for under protective atmosphere.
  • 专利号:   CN107082415-A
  • 发明人:   LIN S
  • 专利权人:   HANGZHOU GELANFENG NANO TECHNOLOGY CO LT
  • 国际专利分类:   C01B032/184
  • 专利详细信息:   CN107082415-A 22 Aug 2017 C01B-032/184 201766 Pages: 8 Chinese
  • 申请详细信息:   CN107082415-A CN10112389 28 Feb 2017
  • 优先权号:   CN10112389

▎ 摘  要

NOVELTY - Preparing germanium-doped graphene material involves placing the germanium source and carbon source in distance of 0-50cm in the reaction furnace tube in molar ratio of 50:1 to 1:1000, heating to 1050-2000 degrees C at rate of 1-300 degrees C per minute under 10(-5) to 105 Pascal, introducing into protective atmosphere and reacting for 1-1000 minutes under protective atmosphere. The obtaiend product is cooled to room temperature at rate of 1-500 degrees C to obtain germanium-doped graphene material. USE - Method for preparing germanium-doped graphene material for quantum light source, photovoltaic, semiconductor device, electronic circuit, radio frequency device, integrated circuit, nanometer energy and composite material (claimed).