▎ 摘　　要

NOVELTY - Preparing zinc oxide nano-wall reduced graphene oxide heterojunction photoelectric sensor comprises e.g. (i) preparing porous graphene dispersion, (ii) preparing zinc oxide seed layer/reduced graphene oxide composite film, (iii) preparing zinc oxide nano wall/reduced graphene oxide film on surface of silver interdigital electrode, and (iv) placing zinc oxide nano wall/reduced graphene oxide film in sample area of CGS-1TP intelligent gas-sensitive analysis system control platform sample area, adjusting two probes to contacting two end electrode sheet, and aging. USE - The method is useful for preparing zinc oxide nano-wall reduced graphene oxide heterojunction photoelectric sensor (claimed). DETAILED DESCRIPTION - Preparing zinc oxide nano-wall reduced graphene oxide heterojunction photoelectric sensor comprises (i) mixing 2-8 mg porous graphene powder with 10 ml dimethylformamide to obtain porous graphene-dimethylformamide suspension at a concentration of 0.2-0.8 mg/ml, and sealing the suspension with multilayer wrap film at room temperature, performing discontinuous sonication for 72 hours, to obtain porous graphene dispersion, allowing to stand for 24 hours, centrifuging at a speed of 4000 revolutions per minute, then absorbing the upper clean liquid in the glass bottle obtain porous graphene dispersion liquid, the silver interdigital electrode in acetone, ethyl alcohol absolute and deionized water for ultrasonic cleaning, and then placing in a temperature of 110 degrees C in the drying oven for 1 hours, taking 1 ml porous graphene dispersion, spraying on the surface of the pretreated silver interdigitated electrode with nozzle with nozzle diameter of 0.2 mm, and then drying at 110 degrees C, and heat treating dried silver interdigitated electrode at 450 degrees C for 0.5 hours under the condition of introducing argon protective gas; (ii) mixing zinc acetate dihydrate and aluminum nitrate nonahydrate in molar ratio of 1:1 with ethanol at room temperature in the presence of zinc oxide seed layer on the surface of reduced graphene oxide, so that the concentration of zinc ion is 0.2 mol/l, then placing in water bath pot, and stirring the mixture at 70 degrees C for 1 hour with magnetic stirrer to obtain homogeneous solution, then pulling silver interdigitated electrode after the heat treatment in step (i) by SYDC-100 dipping machine, and the pulling speed of 6000 mu m/s, the impregnation time is 30 seconds, then drying at 80 degrees C for 10 minutes, then repeatedly pulling for 4 times, and then heat treating at 400 degrees C for 30 minutes in an atmosphere heat treatment program with argon gas protection to obtain zinc oxide seed layer/reduced graphene oxide composite film, (iii) the reduced graphene oxide surface in-situ growing zinc oxide nano wall dissolving zinc nitrate hexahydrate and hexamethylene tetramine in a molar ratio of 1:1-0.05 mol/l solution at 70 degrees C for 1 hours, heating at 70 degrees C and stirring 1 hours, when the solution begins to appear turbid, stop stirring, pouring solution into polytetrafluoroethylene liner of hydrothermal reactor and vertically inserting zinc oxide seed layer/reduced graphene oxide composite film obtained in step (ii) and heating at a constant temperature of 80 degrees C for 5 hours, then removing, and rinsing with deionized water and drying, carrying out heat treatment out at 450 degrees C for 1 hour in an atmosphere heat treatment program with argon gas protection, to obtain zinc oxide nano wall/reduced graphene oxide film on surface of silver interdigital electrode, (iv) placing zinc oxide nano wall/reduced graphene oxide film obtained in step (iii) in the sample area of CGS-1TP intelligent gas-sensitive analysis system control platform sample area, adjusting two probes to contacting two end electrode sheet, the irradiation power at room temperature, 100 wt. of 365 nm waveband light (light emitting diode light source) illumination condition by aging, the aging time is 1.5 hours. An INDEPENDENT CLAIM is also included for zinc oxide nano-wall reduced graphene oxide heterojunction photoelectric sensor obtained by above method.