• 专利标题:   High power surface emitting laser with graphene film current extension layer, has lower electrode, N-type substrate, N-type and P-type distributed Bragg reflectors, graphite film current extension layer, and upper electrode.
  • 专利号:   CN102868091-A
  • 发明人:   LIU J, XU K, MAO M, SUN J, XIE Y, DENG J, ZHU Y, XU C
  • 专利权人:   UNIV BEIJING TECHNOLOGY
  • 国际专利分类:   H01S005/028, H01S005/183
  • 专利详细信息:   CN102868091-A 09 Jan 2013 H01S-005/183 201326 Pages: 7 Chinese
  • 申请详细信息:   CN102868091-A CN10338837 13 Sep 2012
  • 优先权号:   CN10338837

▎ 摘  要

NOVELTY - The laser has a lower electrode (10), an N-type substrate (2), an N-type distribution Bragg reflector (31), an active layer (4), a current limiting layer (5), a P-type distributed Bragg reflector (32), an ohmic contact layer (6), a graphite film current extension layer (7), and an upper electrode (11), which are arranged in bottom to the top order. USE - High power surface emitting laser with graphene film current extension layer. ADVANTAGE - The graphene thin film is used in the current extension layer, thus increasing light extracting efficiency, and thermal conductivity of surface emitting laser. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a High power surface emitting laser with graphene film current extension layer. N-type substrate (2) Active layer (4) Current limiting layer (5) Ohmic contact layer (6) Graphite film current extension layer (7) Lower electrode (10) Upper electrode (11) N-type distribution Bragg reflector (31) P-type distributed Bragg reflector (32)