▎ 摘　　要

NOVELTY - The device has a programming electrode (180) arranged in both sides of a graphene layer (120). A ferroelectric layer (160) is arranged between the graphene layer and the programming electrode. A source electrode (140a) is arranged in an end part of the graphene layer. A drain electrode (140b) is arranged in another end of the graphene layer. A substrate (100) is arranged in a lower part of the graphene layer. The programming electrode is made of metal or conductive oxide. USE - Flash memory device. ADVANTAGE - The device can diversify the modulation of a polling voltage level in the graphene layer. The device reduces a current level flow rate. The device improves high speed operation. The device ensures that high electric field is applied in a dipole polling of the ferroelectric layer so as to prevent leakage current. The device reduces power consumption. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a flash memory device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a memory device. Substrate (100) Graphene layer (120) Source electrode (140a) Drain electrode (140b) Ferroelectric layer (160) Programming electrode (180)