▎ 摘　　要

NOVELTY - Preparing high-single-crystal pure single-layer graphene nanoribbon array involves covering surface of substrate (1) with high single-crystal pure single-layer graphene (2), performing near-field electrospinning direct writing on surface of high-single-crystal pure single-layer graphene to obtain regularly arranged micro/nano mask structure, where the distance between the direct writing head and the substrate in the near-field electrospinning direct writing process is 1-5 mm, the speed of the near-field electrospinning direct writing process is 0.5-3 m/seconds, and the direct-writing linewidth is 100-500 µm, performing oxygen plasma (4) etching on the obtained regularly arranged micro/nano mask structure, and immersing in a liquid to remove the mask structure to obtain a high-single-crystal pure single-layer graphene nanoribbon array. USE - Method for preparing high-single-crystal pure single-layer graphene nanoribbon array used for band gap generation of graphene and preparation of semiconductor device. ADVANTAGE - The method is simple, easy to operate.The prepared high-single-crystal pure single-layer graphene nanoribbon array has stable performance, and the length can reach multiple centimeters to tens of centimeters, which is suitable for large-scale preparation. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a high-single-crystal pure single-layer graphene nanoribbon array is prepared by preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a high-single-crystal pure single-layer graphene nanoribbon array. 1Substrate 2High single-crystal pure single-layer graphene film 3Near-field electrospinning direct-writing device 4Oxygen plasma