▎ 摘　　要

NOVELTY - The method involves providing (101) multilayer graphene sample in the chamber of plasma immersion ion implantation device. The process parameter such as radio frequency power and pulse bias voltage, flow rate and pressure, and plasma injection time of inert gas of the plasma immersion ion implantation device is adjusted (102). The sputtering of thin multi-layer graphene sample is performed (103) using plasma immersion ion implantation technology. The graphene sample is thinned in a high temperature annealing furnace, and cooled to room temperature. USE - Method for thinning multi-layer graphene used in nano electronic device such as high-speed computer chip, solar cell and nano sensor. ADVANTAGE - The thickness of the multi-layer graphene can be adjusted precisely. The graphene can be thinned to any thickness. The thinning rate of graphene can be controlled, at the same time, the high temperature annealing process can repair the graphene. The process is simplified. The need for manual labor can be avoided, good repeatability. The graphene wafer can be manufactured efficiently. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the process for thinning multi-layer graphene. (Drawing includes non-English language text) Step for providing the multilayer graphene sample in the plasma immersion ion implantation device (101) Step for adjusting process parameter of the plasma immersion ion implantation device (102) Step for performing sputtering of thin multi-layer graphene sample (103)