▎ 摘　　要

NOVELTY - The method involves forming a thin film e.g. upper graphene film (100), on a deposition substrate. A support layer (115) is deposited on the thin film. The deposition substrate is removed without removing the thin film and the layer. The thin film and the layer are dried while the thin film is adhered to the layer. The thin film and the layer are placed on a target substrate such that the film is adhered to the target substrate by drying the film and the target substrate. The layer is removed without removing the film and the target substrate. USE - Method for forming a thin film e.g. graphene film (claimed) such as upper and lower graphene films, on a deposition substrate i.e. copper substrate. ADVANTAGE - The method enables removing the layer without removing the film and the target substrate, thus transferring the film between the substrates in an easier and effective manner. The method enables processing the film in easier, safer and inexpensive manner when the film is more readily transported and stored before the film is placed on a final substrate. DETAILED DESCRIPTION - The target substrate is made of aluminum, copper, nickel, silicon dioxide, sapphire, quartz, polyethylene terephthalate and stainless steel. The method enables depositing a liquid on the film, where the liquid are hardened into the layer by evaporation of a solvent that is selected from a group consisting of acetate, a ketone and propane. The method enables performing wet chemical etching in a solution comprising one of iron chloride, iron nitrate and acetone. The method enables facilitating chemical vapor deposition to utilize methane and hydrogen. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of structures for forming a support-layer/graphene film stack in a processing sequence. Upper graphene film (100) Support layer (115) Dry support-layer/graphene film stack (130)