▎ 摘　　要

NOVELTY - Preparation of large-area graphene on silicon-based substrate grating includes chemical vapor deposition in hydrogen, carbonization at 900-1100 degrees C with propane, growing a carbon layer on the substrate, growing the silicon carbide hetero-epitaxial film, generating periodic smooth nano-steppe, hydrogen etching, introducing argon and carbon tetrachloride gas into the mixing chamber, reacting with silicon carbide produce the carbon film, depositing copper film on the carbon film by physical vapor deposition, annealing for 10-25 minutes at 900-1100 degrees C and removing the copper film. USE - Preparation of large-area graphene on silicon-based substrate grating used as copper film annealing graphene. DETAILED DESCRIPTION - Preparation of large-area graphene on silicon-based substrate grating comprises performing RCA washing on 4-12 inches of the silicon substrate, placing the cleaned substrate in the reaction chamber of the chemical vapor deposition system at 0.0000010 mBar vacuum in hydrogen, gradually raising the temperature to the carbonization temperature of 900-1100 degrees C with propane at a flow rate of 40 mL/minute, growing a carbon layer on the substrate within 3-8 minutes, quickly placing into vapor deposition system reaction chamber, raising temperature to 1100-1250 degrees C with the propane and silicon hydride, growing the silicon carbide hetero-epitaxial film for 35 -70 minutes, gradually cooling to the room temperature under the protection of hydrogen, placing in the reaction chamber of the graphene growth device at 13.3 Pa and 1600 degrees C, carrying out 30-minute etching process, generating periodic smooth nano-steppe at 850 degrees C, introducing silicon hydride gas, hydrogen etching, heating to 850-1050 degrees C, opening the gas valve to allow the argon and carbon tetrachloride gas into the mixing chamber, allowing to react with silicon carbide for 40-100 minutes to produce the carbon film, depositing copper film on the carbon film by physical vapor deposition to 200-350 nm thickness, annealing for 10-25 minutes at 900-1100 degrees C to produce copper film on the lower graphene cover, placing the graphene in a ferric chloride solution to remove the copper film. DESCRIPTION OF DRAWING(S) - The drawing is a flowchart of the graphene growing process (Drawing contains non-English language text).