▎ 摘　　要

NOVELTY - Preparing nerve electrical stimulation electrode comprises obtaining silicon substrate, forming sacrificial layer on silicon substrate, forming first flexible substrate layer on sacrificial layer under first spin coating process condition, forming electrode array on first flexible substrate layer, where each electrode in electrode array comprises chromium platinum alloy material, forming second flexible substrate layer on electrode array under condition of second spin coating process, where thickness of second flexible substrate layer is greater than thickness of each electrode, forming hard mask layer on second flexible substrate layer, etching hard mask layer and second flexible substrate layer to expose part of surfaces of electrodes, removing hard mask layer and releasing sacrificial layer, causing silicon substrate to fall off to obtain nerve electrical stimulation electrode, electrochemically treating to form electrode modification layer on surface of each electrode. USE - The method is useful for preparing nerve electrical stimulation electrode, which is useful for analyzing brain cognitive causality by synchronous recording corresponding to a neuron, non-invasive scalp brain electrode, semi-invasive skin layer brain electrode and invasive deep electrode. ADVANTAGE - The method: improves the reliability and safety of the nerve electrical stimulation electrode and improves potential in clinical experiment; and avoids the nerve electrode dissolving defect in electrical stimulation. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an electrical nerve stimulation electrode prepared by above mentioned method.