▎ 摘　　要

NOVELTY - Hybrid solar cells with N-type semiconductors modified with nitrogen-containing polymers comprises a hole transport layer injected between the working electrode and the counter electrode, first substrate, first electrode formed on the first substrate, N-type semiconductor layer formed on the first electrode, one nitrogen-containing polymer (I)-(II) adsorbed on the surface of the N-type semiconductor layer, working electrode comprises a P-type semiconductor layer bonded to the surface of the N-type semiconductor layer, second substrate, counter electrode including a second electrode formed on the second substrate to face the first electrode, sealing member for bonding the working electrode and the counter electrode and hybrid solar cell having an N-type semiconductor modified with a nitrogen-containing polymer. USE - Hybrid solar cells with N-type semiconductors modified with nitrogen-containing polymers. ADVANTAGE - The hybrid solar cells with N-type semiconductors modified with nitrogen-containing polymers increases the efficiency of the hybrid solar cell and efficiency of the hybrid solar cell by improving the injection. DETAILED DESCRIPTION - Hybrid solar cells with N-type semiconductors modified with nitrogen-containing polymers comprises a hole transport layer injected between the working electrode and the counter electrode, first substrate, first electrode formed on the first substrate, N-type semiconductor layer formed on the first electrode, one nitrogen-containing polymer of formulae (I)-(II) adsorbed on the surface of the N-type semiconductor layer, working electrode comprises a P-type semiconductor layer bonded to the surface of the N-type semiconductor layer, second substrat, counter electrode including a second electrode formed on the second substrate to face the first electrode, sealing member for bonding the working electrode and the counter electrode and hybrid solar cell having an N-type semiconductor modified with a nitrogen-containing polymer.. R1, R2, R3, R4 and R5=hydrogen, halogen atom; hydroxyl group; cyano group, substituted or unsubstituted acetate group having 1-30C atoms, substituted or unsubstituted ketone group having 1-30C atoms, substituted or unsubstituted vinyl group having 1-30C atoms, substituted or unsubstituted alkoxy group having 1-30C atoms, substituted or unsubstituted alkyl group having 1-30C atoms, substituted or unsubstituted heteroalkyl group consisting of 1-30 prime numbers, substituted or unsubstituted heteroalkoxy group having 1-30C atoms, substituted or unsubstituted aryl group having 6-30C atoms, substituted or unsubstituted arylalkyl group having 6-30C atoms, substituted or unsubstituted aryloxy group having 6-30C atoms, substituted or unsubstituted heteroaryl group having 2-30C atoms, substituted or unsubstituted heteroarylalkyl group having 2-30C atoms, substituted or unsubstituted heteroarylox having 2-30C atom, substituted or unsubstituted cycloalkyl group having 5-20C atoms, substituted or unsubstituted heterocycloalkyl group having 2-30C atoms, substituted or unsubstituted alkyl ester group consisting of 1-30C atoms, substituted or unsubstituted heteroalkyl ester group consisting of 1-30C atoms, substituted or unsubstituted aryl ester group having 2-30C atoms, substituted or unsubstituted heteroaryl ester group having 2-30C atoms; and X and Y'=same as or different from each other, and a vinyl polymer, repeating unit of a chain-growth polymer containing an acrylic polymer or a repeating unit of a stepgrowth polymer containing an addition polymerization polymer or a condensation polymerization polymer. An INDEPENDENT CLAIM is included for a method for prepring a hybrid solar cells with N-type semiconductors modified with nitrogen-containing polymers, which involves: (A) injecting a hole transport layer between the working electrode and the counter electrode forming a first electrode on the first substrate; (B) forming an N-type semiconductor layer on the first electrode, preparing a surface-modified N-type semiconductor layer by contacting the nitrogen-containing polymer solution with the N-type semiconductor layer; (C) preparing working electrode consisting of bonding a P-type semiconductor to the surface of the surface-modified N-type semiconductor layer; and (D) preparing counter electrode by forming a second electrode on a second substrate to face the first electrode, sealing the working electrode and the counter electrode.