▎ 摘　　要

NOVELTY - Preparing thin free-standing oxide film involves providing substrate, where the substrate defining hole having diameter of about 500-5000 nanometers, depositing layer of metal on the substrate, depositing a supporting layer on the layer of metal. The first side of the supporting layer being the side that is provided on the layer of metal and deposited a metal oxide layer on the first side of the supporting layer and on the substrate. USE - Thin free-standing oxide film used in environmental X-ray photoelectron and infrared spectroscopy for molecular level studies of solid-gas (greater than or equal to1 bar) and solid-liquid interfaces and supports of metal particles for catalysis studies, as electrodes in electrocatalysis, in batteries, and in many other applications. ADVANTAGE - The thin free-standing oxide film is transparent to photons and to electrons with a wide range of kinetic energies, has remarkable mechanical strength and can withstand large pressure differences (greater than or equal to1 bar), which makes them useful as cell film windows.