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  • 专利标题:   Multilayer Silicon/graphene composite anode structure for half and full lithium-ion cells, has graphene thin film deposited onto amorphous phase upper silicon thin film of Silicon/graphene unit layer, where layer is deposited on substrate.
  • 专利号:   US2015004494-A1, CN104253266-A, TW461555-B1, TW201500568-A, CN104253266-B
  • 发明人:   TATSUHIRO M, CHEN C, HUNG T, MOHAMED S G, LIU R, HU S, LIN H, LIN Y, SUNG C, HWANG B, CHEN Z, HONG T, HUANG B, SEN D, SHAD M, SONG J, CHEN C J, HUNG T F, LIU R S, HU S F, LIN H Z, LIN Y Q, SUNG C M, HWANG B J
  • 专利权人:   TATSUHIRO M, CHEN C, HUNG T, MOHAMED S G, LIU R, HU S, LIN H, LIN Y, SUNG C, HWANG B, HUANG B, UNIV NAT TAIWAN SCI TECHNOLOGY, HUANG B
  • 国际专利分类:   H01M004/04, H01M004/36, H01M004/38, H01M004/583, H01M004/133, H01M004/134, C23C014/14, C23C014/24
  • 专利详细信息:   US2015004494-A1 01 Jan 2015 H01M-004/36 201503 Pages: 13 English
  • 申请详细信息:   US2015004494-A1 US314895 25 Jun 2014
  • 优先权号:   TW122827

▎ 摘　　要

NOVELTY - The structure has a graphene thin film (12) deposited onto an amorphous phase upper silicon thin film (11) of a Silicon/graphene unit layer and onto a top surface of the Silicon/graphene unit layer. The Silicon/graphene unit layer is deposited on an anode substrate i.e. copper foil (13). A lower graphene thin film of the Silicon/graphene unit layer is provided with thickness of 50 nanometer, where the structure is provided with coulombic efficiency in first charge/discharge cycle larger than 80% and irreversible capacity in second charge/discharge cycle less than 20%. USE - Multilayer Silicon/graphene composite anode structure for half and full lithium-ion cells. ADVANTAGE - The structure controls thicknesses of the graphene thin film and of the silicon thin film at less than 50 nanomter so as to minimize volumetric change of anode material. The graphene thin film of the structure is deposited onto a surface of a copper foil current collector to form an underside surface of the structure, so that considerably large difference of conductivity between the current collector and the silicon thin film can avoid problem of poor electrochemical performance. The structure enables a top surface of the structure made of the graphene thin film so as to prevent silicon thin film from being exposed to air and from being oxidized into inactive silicon dioxide. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing an electrode structure. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a multilayer Silicon/graphene composite anode structure. Amorphous phase upper silicon thin film (11) Graphene thin film (12) Copper foil (13)