▎ 摘　　要

NOVELTY - The method involves forming a plasma enhance chemical gas phase depositing vacuum device as substrate material. A plasma enhance chemical gas phase depositing vacuum pressure control device is connected with the plasma enhance chemical gas phase depositing vacuum device. Heating speed of the vacuum pressure control device is calculated. An annealing treatment is performed. Pumping speed of the plasma enhance chemical gas phase depositing vacuum device is calculated. The substrate material is formed as titanium, silicon dioxide, silicon multi-layer mixed substrate material. USE - 3D bowl-shaped mixed nano-structure graphene super capacitor electrode material manufacturing method. ADVANTAGE - The method enables improving charge annihilation rate, reducing conducting charge and deposition of graphene amount and performing annealing process for the substrate material and carbon source gas deposition process. DESCRIPTION OF DRAWING(S) - The drawing shows a photograph view illustrating a 3D bowl-shaped mixed nano-structure graphene super capacitor electrode material manufacturing method.