• 专利标题:   Single-layer planar graphene having uniform layer thickness, where graphene film is obtained by pre-treating copper foil, drying, placing in quartz tube, introducing argon, heat-treating, cooling, curing and finally transferring graphene on copper foil.
  • 专利号:   CN113772662-A
  • 发明人:   LI J, CHEN J, YE L, YU M
  • 专利权人:   SHANGHAI BAKUSI SUPERCONDUCTING NEW MATE
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN113772662-A 10 Dec 2021 C01B-032/186 202222 Chinese
  • 申请详细信息:   CN113772662-A CN11088403 16 Sep 2021
  • 优先权号:   CN11088403

▎ 摘  要

NOVELTY - Single-layer planar graphene having a uniform layer thickness, where the graphene film is obtained by pre-treating a copper foil, drying in an inert gas atmosphere, placing the dried copper foil in a quartz tube, sealing both ends of the quartz tube with flanges, pumping to 50Pa with a vacuum pump, introducing argon to normal pressure, heat-treating the quartz tube to grow graphene on the copper foil, cooling the temperature in the quartz tube to room temperature, taking out the copper foil with graphene, curing and finally transferring the graphene on the copper foil. USE - As single-layer planar graphene with uniform layer thickness. ADVANTAGE - The single-layer planar graphene is grown on a copper substrate by an optimized chemical vapor deposition method, where the graphene film is a single layer and has a high degree of crystallinity, small defects, large-area and excellent light transmittance and electrical conductivity.