▎ 摘　　要

NOVELTY - The device has a graphene layer (3) located on an aluminum nitride sputtered layer (2), where the aluminum nitride sputtered layer wraps the graphene layer and thickness of the aluminum nitride sputtered layer is about 8-12 nm. The aluminum nitride sputtered layer is located on a gallium nitride thin film layer (1), where thickness of the gallium nitride thin film layer is about 3-5 mm. The gallium nitride thin film layer is located on a metal electrode layer. The metal electrode layer comprises a metal layer (5) and a substrate (6). The metal layer is plated on the substrate. The graphene layer is formed as a multi graphene layer. USE - Flexible gallium nitride-based graphene metal insulator semiconductor device. ADVANTAGE - The device is simple and easy to operate, and can avoid need of special requirement for a substrate so that flexibility can be easily achieved without affecting performance under flexible condition impact and operation cost can be reduced. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a flexible gallium nitride-based graphene metal insulator semiconductor device manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a flexible gallium nitride-based graphene metal insulator semiconductor device. Gallium nitride thin film layer (1) Aluminum nitride sputtered layer (2) Graphene layer (3) Metal layer (5) Substrate (6)