▎ 摘　　要

NOVELTY - The electrode has a graphene film layer formed on a copper foil. The graphene film layer and a lead-out metal wire are connected with each other. A semiconductor laser electrode body is connected with the graphene film layer that is connected with a laser chip, where the electrode body is made of graphene film material or multi-layer graphene material. A graphene thin film is provided with P-type and N-type electrodes. The graphene film layer is fixed on a Gold contact point. The electrode body is connected with a semiconductor laser device. USE - Vertical cavity surface emitting semiconductor laser electrode. ADVANTAGE - The electrode has high electric and heat conduction property, and effectively improves vertical cavity surface emitting semiconductor laser light emitting area. The electrode has better conductive property and radiating property, and maintains uniform current injection during larger aperture, and quickly and effectively dissipates heat generated by the device, and improves output power of the device, and increases good spot quality, and avoids vertical cavity surface emitting semiconductor laser electrode preparation complexity. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a vertical cavity surface emitting semiconductor laser electrode.