• 专利标题:   Full two-dimensional vacuum tube used in e.g. high-precision vacuum pressure sensors, includes two-dimensional conductive material transistor which is utilized as thermal field emission source-cathode, and metal conductive material which is utilized as electron collection electrode-anode.
  • 专利号:   CN113990724-A
  • 发明人:   ZHANG T, LI X, HAN Z
  • 专利权人:   UNIV SHANXI
  • 国际专利分类:   B82Y010/00, B82Y040/00, H01J021/10, H01J009/00
  • 专利详细信息:   CN113990724-A 28 Jan 2022 H01J-021/10 202227 Chinese
  • 申请详细信息:   CN113990724-A CN11215835 19 Oct 2021
  • 优先权号:   CN11215835

▎ 摘  要

NOVELTY - The full two-dimensional vacuum tube includes two-dimensional insulating material as precursor material of vacuum channel in the vacuum tube. A two-dimensional conductive material transistor is utilized as thermal field emission source-cathode, and the metal conductive material is utilized as electron collection electrode-anode. USE - Full two-dimensional vacuum tube used in high-precision vacuum pressure sensors, nanoelectromechanical system (NEMS) micro-motor system, radiation-resistant thermal field emission power transistor, electronic circuit, glow display, X-ray generator, microwave oscillator and microelectronic and high power electronic circuit. ADVANTAGE - Since the full two-dimensional vacuum tube is prepared in array, the integration into modular circuit is enabled. The stability of the anode voltage is ensured, stable thermal field emission current is provided, the size is reduced, and quality of the device is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation method of full two-dimensional vacuum tube. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the structure of full-two-dimensional vacuum tube. (Drawing includes non-English language text).