▎ 摘　　要

NOVELTY - Producing polycrystalline indium tin oxide complex, comprises e.g. (a) mixing indium tin oxide nanoparticles and graphene oxide, and dispersing in dispersion solvent for coating the graphene oxide on the surface of the indium tin oxide nanoparticles, (b) adding reducing agent to the mixture to reduce the graphene oxide, (c) separating the liquid and the particles to obtain indium tin oxide nanoparticles coated with the reduced graphene oxide, and (d) forming a sandwich structure in which alumina powder/reduced graphene oxide-coated indium tin oxide nanoparticles/alumina powder are coated. USE - The method is useful for producing polycrystalline indium tin oxide complex of electrical conductor (all claimed). ADVANTAGE - The polycrystalline indium tin oxide complex has high electrical conductivity, single-crystal level mobility and improved charge transfer characteristics, emits trapped electrons in the grain boundaries, reduces Schottky barrier which causes grain boundary scattering, and does not conduct charge through the percolated graphene network. DETAILED DESCRIPTION - Producing polycrystalline indium tin oxide complex, comprises (a) mixing indium tin oxide nanoparticles and graphene oxide, and dispersing in dispersion solvent for coating the graphene oxide on the surface of the indium tin oxide nanoparticles, (b) adding reducing agent to the mixture to reduce the graphene oxide, (c) separating the liquid and the particles to obtain indium tin oxide nanoparticles coated with the reduced graphene oxide, (d) forming a sandwich structure in which alumina powder/reduced graphene oxide-coated indium tin oxide nanoparticles/alumina powder are coated, and (e) performing sintering process on the sandwich structure to crystallize the sandwich structure. The reduced graphene oxide is located on the indium tin oxide grain interface. The polycrystalline indium tin oxide complex has electric conductivity of 3000-4000 S/cm and Seebeck constant of -25 to -50 mu V/K in temperature of 300-900K.