• 专利标题:   Stimulating water decomposition performance of graphene loaded semiconductor CdS composite material comprises e.g. optimizing the structure of graphene-loaded semiconductor CdS composite material.
  • 专利号:   CN106430092-A, CN106430092-B
  • 发明人:   YANG F, WAN R
  • 专利权人:   UNIV WUHAN TEXTILE, UNIV WUHAN TEXTILE
  • 国际专利分类:   B01J027/04, C01B003/04
  • 专利详细信息:   CN106430092-A 22 Feb 2017 C01B-003/04 201729 Pages: 8 Chinese
  • 申请详细信息:   CN106430092-A CN10777110 30 Aug 2016
  • 优先权号:   CN10777110

▎ 摘  要

NOVELTY - Stimulating water decomposition performance of graphene loaded semiconductor CdS composite material comprises e.g. optimizing the structure of graphene-loaded semiconductor CdS composite material; simulating the reaction process of water to produce hydrogen on the surface of graphene-loaded semiconductor CdS composite material; and using the density functional theory and the molecular dynamics simulation method of the first principle to obtain the relationship between the structure of the defective graphene-supported semiconductor catalyst CdS composite material. USE - The method is useful for stimulating water decomposition performance of graphene loaded semiconductor CdS composite material (claimed). DETAILED DESCRIPTION - Stimulating water decomposition performance of graphene loaded semiconductor CdS composite material comprises (i) optimizing the structure of graphene-loaded semiconductor CdS composite material; (ii) simulating the reaction process of water to produce hydrogen on the surface of graphene-loaded semiconductor CdS composite material; and (iii) using the density functional theory and the molecular dynamics simulation method of the first principle to obtain the relationship between the structure of the defective graphene-supported semiconductor catalyst CdS composite material and the hydrogen production performance.