▎ 摘　　要

NOVELTY - The method involves growing silicon dioxide (SiO2) insulation layer in silicon (Si) substrate surface. The surface of SiO2/Si substrate (1) is sputtered by titanium-tungsten?(TiW) alloy and gold (Au). An array of Au electrode (3) and TiW/Au lines (2) is formed. A SiO2 insulating layer is formed between the TiW/Au lines by reactive ion etching process. A graphene thin film (5) is formed to the top of TiW/Au wire by a chemical vapor deposition process. An array of graphene nano-electromechanical resonator with specific energy density of femtosecond laser is formed. USE - Large-scale femtosecond laser-based graphene nano-electromechanical resonator preparation method. ADVANTAGE - The plasma etching process is avoided in the graphene nano-electromechanical resonator preparation process. The secondary pollution of graphene is reduced. The resonance frequency and the quality factor of the graphene nano-electromechanical resonator are greatly increased, while greatly reducing the manufacturing cost. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the graphene nano-electromechanical resonator structure. SiO2/Si substrate (1) TiW/Au line (2) Au electrode (3) Groove (4) Graphene thin film (5)