• 专利标题:   Method for preparing single-layer and multi-layer graphene from chemical gas phase deposition, involves pouring carbon gas to vacuum cavity and maintaining flow rate of hydrogen gas, and obtaining metal substrate deposited with graphene.
  • 专利号:   CN102220566-A, WO2012167701-A1
  • 发明人:   QU Y
  • 专利权人:   WUXI DILIUYUANSU HITECH DEV CO LTD, WUXI SIXTH ELEMENT HITECH DEV CO LTD
  • 国际专利分类:   C23C016/26, C01B031/04
  • 专利详细信息:   CN102220566-A 19 Oct 2011 C23C-016/26 201207 Pages: 7 Chinese
  • 申请详细信息:   CN102220566-A CN10153485 09 Jun 2011
  • 优先权号:   CN10153485

▎ 摘  要

NOVELTY - The method involves arranging a transitional metal substrate in a vacuum reaction furnace. The hydrogen gas is poured to the vacuum cavity, while removing the oxygen gas in the vacuum cavity and heated up to 800-1100 degrees C. The carbon gas is poured to the vacuum cavity and the flow rate of the hydrogen gas is maintained. A metal substrate deposited with a graphene is obtained after 1-100 minutes. The air pressure of the tube furnace or atmosphere furnace is pumped to the limit vacuum state. USE - Method for preparing single-layer and multi-layer graphene from chemical gas phase deposition. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the reaction device. (Drawing includes non-English language text)