▎ 摘　　要

NOVELTY - The doped silicon composite double-layer structure terahertz modulator comprises a substrate (1) that is provided with an insulation layer (2), metal-doped silicon semiconductor layer (3), graphene thin film (4) and pump laser beam (5). The metal-doped silicon semiconductor layer uses intrinsic N-type high flame-retardant silicon or intrinsic silicon. The doping metal is gold or platinum. The graphene thin film is provided with graphite alkene on a belt. USE - Doped silicon composite double-layer structure terahertz modulator. ADVANTAGE - The doped silicon composite double-layer structure terahertz modulator comprises a substrate that is provided with an insulation layer, metal-doped silicon semiconductor layer, graphene thin film and pump laser beam, and hence increases modulation depth of modulating terahertz wave, and decreases insertion loss. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a doped silicon composite double-layer structure terahertz modulator. Substrate (1) Insulation layer (2) Metal-doped silicon semiconductor layer (3) Graphene thin film (4) Pump laser beam (5)