• 专利标题:   Silicon/silicon-di-oxide/graphene multi-layer structure high performance hydrogen sensor, has substrate whose surface cover is provided with sensing thin film, palladium crystal grain layer attached with multi-layer composite structure.
  • 专利号:   CN204514848-U
  • 发明人:   HUANG X, GE J, TAN W, YU Z
  • 专利权人:   UNIV CENTRAL CHINA NORMAL
  • 国际专利分类:   G01N027/12, G01N027/26
  • 专利详细信息:   CN204514848-U 29 Jul 2015 G01N-027/12 201566 Chinese
  • 申请详细信息:   CN204514848-U CN20165090 23 Mar 2015
  • 优先权号:   CN20165090

▎ 摘  要

NOVELTY - This new utility model claims Si/SiO2/ graphene/multi-layer structure high performance hydrogen sensor. Si/sio2/ graphene/palladium layer structure multi-high performance hydrogen sensor, comprising substrate and substrate surface cover the sensing thin film, wherein the sensor film is Si/SiO2, graphite layer and palladium crystal grain layer according to order of bottom to top in turn is formed by composite of Si/SiO2/ graphene/multi-layer composite structure. Measuring the hydrogen gas of high sensitivity, response and recovery time short, measuring beyond hydrogen reaction sensitivity and low concentration, can avoid hydrogen embrittlement influence, structure is simple, performance is excellent.