▎ 摘　　要

NOVELTY - The wafer has a luminous layer formed on an N-type semiconductor layer. A lower electrode is formed on a light emitting layer. A P-type semiconductor layer is formed by etching the N-type semiconductor layer. A groove is formed on the P-type semiconductor layer. A positive electrode and a negative electrode are made of graphite material. The N-type semiconductor layer is provided with a symmetrical E-shaped positive electrode and E-shaped negative electrode. The positive electrode is set around a periphery of the E-shaped negative electrode. USE - LED wafer for a graphene electrode. ADVANTAGE - The wafer has high light emitting efficiency, good radiation effect and prolonged service life. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an LED wafer manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a top view of an LED wafer for a graphene electrode.