▎ 摘　　要

NOVELTY - Depositing graphene barrier film, comprises placing the substrate containing the titanium thin film layer into the substrate processing system chamber forming the processing space; supplying the first reaction gas into the chamber to guide the formation of crystal nuclei on the titanium thin film layer; and supplying second reaction gas into chamber, and forming graphene layer on the titanium thin film layer. USE - The method is useful for depositing graphene barrier film in contact structure (claimed) in semiconductor element. ADVANTAGE - The method enables forming a graphene barrier film for a semiconductor element, in particular forms a barrier film including a graphene layer, thus reducing the contact resistance of metal wiring. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a contact structure. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of depositing graphene barrier film (Drawing includes non-English language text).