• 专利标题:   Method of growing graphene involves injecting carbon on inorganic substrate, forming graphite catalyst layer on carbon-injected inorganic substrate, forming multilayer board on substrate and growing graphene on multilayer board.
  • 专利号:   KR2012124780-A, KR1878733-B1
  • 发明人:   YOON S M, CHOI J Y, WOO Y S, SHIN H J, LEE S K
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   C01B031/02, C23C016/26
  • 专利详细信息:   KR2012124780-A 14 Nov 2012 C01B-031/02 201311 Pages: 14
  • 申请详细信息:   KR2012124780-A KR042624 04 May 2011
  • 优先权号:   KR042624

▎ 摘  要

NOVELTY - Method of growing graphene involves injecting carbon on at least one surface of inorganic substrate, forming graphite catalyst layer on surface of carbon-injected inorganic substrate, forming multilayer board on inorganic substrate, and growing graphene on multilayer board. USE - Method of growing graphene. ADVANTAGE - The method provides graphene having improved crystallization, and damage resistance, and does not require separate transcription process.