▎ 摘　　要

NOVELTY - Graphene is obtained by forming (S100) a graphene layer on a base substrate, attaching (S110) a target substrate onto the graphene layer, and separating (S120) the graphene layer from the base substrate to transfer the graphene layer onto the target substrate. USE - Manufacture of graphene for top-gate FETs. ADVANTAGE - The method enables economical and environmentally-friendly mass-production of high-quality uniform graphene, without requiring etching and damaging the substrate, with low defect density. The obtained graphene provides top-gate FETs having excellent bending stability. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of the manufacturing method of graphene. (Drawing includes non-English language text) Formation of graphene layer (S100) Attachment of target substrate (S110) Separation of graphene layer (S120) Determination of whether to repeat previous processes (S130)