▎ 摘　　要

NOVELTY - Silicon substrate is transferred to chemical vapor deposition reaction chamber, propane is filled, and silicon substrate is carbonized to grow carbide layer. The reaction chamber is heated, and propane and silane gas is filled to perform heteroepitaxial growth of silicon carbide film. The silicon carbide film sample filled with silicon ion is transferred to epitaxial furnace to pyrolyze silicon carbide to generate carbon membrane. The carbon film sample is mounted on copper membrane under argon atmosphere and annealed to form graphene nano belt. USE - Method for preparing graphene nano belt used for manufacturing micro-electronic apparatus. ADVANTAGE - The method efficiently and economically produces graphene nano belt with smooth surface and excellent continuity and safety to use. DETAILED DESCRIPTION - Silicon substrate with 4-12 inches is cleaned, transferred to chemical vapor deposition reaction chamber, vacuum is pumped to reaction chamber until the vacuum chamber reaches 10-7 mbar under hydrogen atmosphere, reaction chamber is to carbonization temperature of 900-1100 degrees C, propane is filled in flow rate of 40 ml/minute, and silicon substrate is carbonized for 3-8 minutes to grow a carbide layer. The reaction chamber is heated at 1100-1250 degrees C, propane and silane gas is filled to perform heteroepitaxial growth of silicon carbide (3C-SiC) film for 35-70 minutes, gradually cooled to room temperature under hydrogen atmosphere and introducing energy of 15-30 KeV and dosage of silicon ions of 5x 1014-5x 1017 cm-2. The silicon carbide (3C-SiC) film sample filled with silicon ion is transferred to epitaxial furnace with pressure of 0.5-1asterisk10-6 torr, argon gas is filled, heated at 1200-1300 degrees C for 30-90 minutes to pyrolyze silicon carbide (3C-SiC) to generate carbon membrane. The carbon film sample is mounted on copper membrane under argon atmosphere, annealed at 900-1200 degrees C for 10-20 minutes to attach the carbon film on copper film to form graphene nano belt, and removing the copper film from graphene nano belt.