▎ 摘　　要

NOVELTY - The method involves cleaning silicon carbide wafer by plasma-enhanced chemical vapor deposition process. A silicon dioxide mask is deposed on cleaned wafer and formed with side gate graphene transistor pattern in etching way. The photoetched wafer is placed in the quartz tube and reacted with chlorine gas to form carbon film. Nickel film layer is formed on carbon film after removing silicon dioxide mask. The polyether diols (Pd) layer is deposited on carbon film pattern and etched into metal contact of side gate graphene transistor after placing carbon film in argon. USE - Nickel film annealing side gate graphene thin film transistor preparation method based on reaction of silicon carbide and chlorine gas. ADVANTAGE - The migration rates of current carriers can be improved, and the channel current of single transistor can be controlled, and the scattering effect of top gate mediums of a top gate graphene field-effect tube can be avoided. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating the preparation process of nickel film annealing side gate grapheme transistor.