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  • 专利标题:   Graphene transfer method involves forming graphene on substrate, coating mixture containing polystyrene and solvent on the graphene, forming protective layer, and removing substrate and protective layer.
  • 专利号:   KR2013132105-A, KR1969853-B1
  • 发明人:   KIM U J, HUR J H, KIM J E, ROH Y G, PARK Y S, LEE C W, LEE J S, CHEON S M
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   B01J019/08, C01B031/02
  • 专利详细信息:   KR2013132105-A 04 Dec 2013 C01B-031/02 201410 Pages: 20
  • 申请详细信息:   KR2013132105-A KR056230 25 May 2012
  • 优先权号:   KR056230

▎ 摘　　要

NOVELTY - Graphene transfer method involves forming graphene on a substrate, coating a mixture containing polystyrene and solvent on the graphene, forming protective layer, and removing the substrate and protective layer. USE - Graphene transfer method (claimed). DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for device for graphene transfer method.