▎ 摘　　要

NOVELTY - Growing graphene film on surface of copper powder involves: (S1) initially heating copper powder or copper powder mixture in a chemical vapor deposition furnace to an oxidation temperature, and pre-oxidizing the copper powder; (S2) continuously heating the chemical vapor deposition furnace to the growth temperature after pre-oxidation treatment is completed, and simultaneously reducing the surface of the copper powder and growing graphene; and (S3) cooling the growth product after the growth process is completed. USE - The method is useful for growing graphene film on surface of copper powder. ADVANTAGE - The method simplifies the growth process of the graphene film on the surface of the copper powder, ensures improved overall process efficiency, and utilizes pre-oxidation treatment combined with reduction and growth operations to reduce nucleation points, grain boundaries and defects on the surface of the copper powder, so that the grain size of the graphene film grown on the surface of the copper powder is large, generally reaching 5-10 microns, and improves the quality of graphene.