▎ 摘　　要

NOVELTY - Depositing a large-area graphene layer involves forming a titanium (Ti) layer on a substrate by sputtering, and reducing titanium layer by spraying a reductant gas and a purge gas onto the titanium layer when it is moved in a first direction in relation to the substrate and exhausting reductant gas and purge gas, where reductant gas contains a hydrogen gas. The graphene is formed by spraying a reactant gas and purge gas onto titanium layer which is moved in a second direction opposite to first direction and then reactant gas and purge gas are exhausted, where reactant gas contains a graphene source. USE - Method for depositing a large-area graphene layer. ADVANTAGE - The method enables to deposit a large-area graphene layer, which allows transfer-free growth of a large-area graphene thin film in a low temperature of below 300degrees Celsius, forms high-quality graphene layer with a large area at a low temperature below 300degrees Celsius, prevents intermixing of reductant gas and reactant gas, prevents occurrence of particle by mixing reductant and reactant gas, and manufactures graphene of a high quality. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an apparatus for continuous graphene deposition, which comprises a sputtering unit and an injector, where sputtering unit is configured to form a titanium layer by depositing titanium layer onto a surface of a substrate, and injector is configured to grow graphene on the titanium layer, where injector comprises a reductant supply unit configured to supply a reductant gas to substrate, a reactant supply unit configured to supply a reactant gas to substrate, a purge supply unit arranged between reductant supply unit and reactant supply unit, where purge supply unit is configured to supply a purge gas to the substrate, and an exhaust unit configured to exhaust gases from the substrate.